Yulia Slavina

Vertical nanostructures enable smaller, low-power spintronic devices, NVE announces

Vertical nanostructures enable smaller, low-power spintronic devices, NVE announces
NVE unveils 3.5 nm technology

NVE outlined the use of vertical dimensions measuring about 3.5 nanometers—approximately eight atomic layers—in its spintronic structures.

According to the company, this approach enables the creation of devices that are smaller, require less power, and offer greater networking capabilities compared to conventional semiconductors.

NVE previously introduced ABT-Series TMR sensors that deliver precise position, speed, and direction sensing. These sensors are designed to provide large, low-distortion signals. The latest update on spintronic structures follows a series of product developments focused on advanced sensing technologies.

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